В.В. Андрюшкин, И.И. Новиков, А.Г. Гладышев, А. В. Бабичев, Л.Я. Карачинский, В.В. Дюделев, Г.С. Соколовский, А. Ю. Егоров
{"title":"外延增长的特点是在InP底板上的薄压力层/ InGaAs/InAlAs。","authors":"В.В. Андрюшкин, И.И. Новиков, А.Г. Гладышев, А. В. Бабичев, Л.Я. Карачинский, В.В. Дюделев, Г.С. Соколовский, А. Ю. Егоров","doi":"10.21883/jtf.2023.08.55979.41-23","DOIUrl":null,"url":null,"abstract":"In this paper we present the study of the features of epitaxial growth highly stressed superlattices based on highly stressed thin InGaAs/InAlAs layers on InP substrates by the molecular beam epitaxy. It was shown that the growth rates of the InGaAs and InAlAs bulk layers lattice-matched to InP substrates do not allow us to precisely determine the growth rates of thin highly stressed InAlAs/InGaAs strain compensated superlattices and the error is about 10 percent. The effect is related to the difference in the growth temperatures of InGaAs and InAlAs bulk layers, which affects the intensity of indium evaporation from the growth surface.","PeriodicalId":24036,"journal":{"name":"Журнал технической физики","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Особенности эпитаксиального роста методом МПЭ тонких сильно напряженных слоев InGaAs/InAlAs на подложках InP\",\"authors\":\"В.В. Андрюшкин, И.И. Новиков, А.Г. Гладышев, А. В. Бабичев, Л.Я. Карачинский, В.В. Дюделев, Г.С. Соколовский, А. Ю. Егоров\",\"doi\":\"10.21883/jtf.2023.08.55979.41-23\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present the study of the features of epitaxial growth highly stressed superlattices based on highly stressed thin InGaAs/InAlAs layers on InP substrates by the molecular beam epitaxy. It was shown that the growth rates of the InGaAs and InAlAs bulk layers lattice-matched to InP substrates do not allow us to precisely determine the growth rates of thin highly stressed InAlAs/InGaAs strain compensated superlattices and the error is about 10 percent. The effect is related to the difference in the growth temperatures of InGaAs and InAlAs bulk layers, which affects the intensity of indium evaporation from the growth surface.\",\"PeriodicalId\":24036,\"journal\":{\"name\":\"Журнал технической физики\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Журнал технической физики\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21883/jtf.2023.08.55979.41-23\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Журнал технической физики","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/jtf.2023.08.55979.41-23","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Особенности эпитаксиального роста методом МПЭ тонких сильно напряженных слоев InGaAs/InAlAs на подложках InP
In this paper we present the study of the features of epitaxial growth highly stressed superlattices based on highly stressed thin InGaAs/InAlAs layers on InP substrates by the molecular beam epitaxy. It was shown that the growth rates of the InGaAs and InAlAs bulk layers lattice-matched to InP substrates do not allow us to precisely determine the growth rates of thin highly stressed InAlAs/InGaAs strain compensated superlattices and the error is about 10 percent. The effect is related to the difference in the growth temperatures of InGaAs and InAlAs bulk layers, which affects the intensity of indium evaporation from the growth surface.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
