一种用于极/超低频应用的新型可调谐伪电阻

2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Pub Date : 2019-09-01 DOI:10.1109/ICEEE.2019.8884489

Luis Fernando Martínez Pantoja, A. Díaz-Sánchez, J. M. Rocha-Pérez

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引用次数: 1

摘要

本文提出了一种用MOS晶体管实现的伪电阻(PR)的新结构，工作在亚阈值区域，从Mega $\Omega$到Giga $\Omega$范围可调。利用差分对对MOS晶体管的V_{GS}$进行编程。设计了一种超低频带通滤波器，该滤波器采用了可调的高通截止频率，调谐范围为0.28 Hz ~ 900 Hz。当输入电压为$\mathbf{224}\ mV_{pp}$时，模拟的总谐波失真为$。采用HSPICE模拟设计环境和ON-SEMI 0.5 $\mu \mathbf{m}$技术参数进行了仿真，验证了所提电路的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new Tunable Pseudo-Resistor for Extremely/Ultra Low Frequency applications

This paper presents a new architecture for a pseudo-resistor (PR) implemented with MOS transistors, working in subthreshold region, tunable from Mega $\Omega$ to Giga $\Omega$ range. The proposed PR is programmed by controlling the $V_{GS}$ of the MOS transistors with a differential pair. An ultra-low frequency bandpass filter which uses the proposed PR with adjustable highpass cut-off frequency for a tuning range of 0.28 Hz to 900 Hz was designed. The simulated total harmonic distortion is $ for an input voltage of $\mathbf{224}\ mV_{pp}$ . Simulations were performed using HSPICE Analog Design Environment and ON-SEMI 0.5 $\mu \mathbf{m}$ technology parameters which validates the feasibility of the proposed circuit.

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来源期刊

2014 11th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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