Enhancement of thermoelectric properties of TiO2/SrTiO3 bilayer after Ar ion irradiation

The Ar ion irradiation induced effects in thermoelectric properties of TiO2/STO bilayer have been investigated by X-ray Diffraction, alongwith X-ray Absorption spectroscopy. The bilayer was deposited on silicon substrate by Pulsed laser deposition at a substrate temperature of 700°C and then irradiated by using 1 MeV Ar ion beam at a fluence of 1×1016 ions/cm2. The Seebeck coefficient and resistivity measurements were performed by the bridge method and two probe measurements. It was found that resistivity of the bilayer drastically reduces after Ar irradiation and Seebeck coefficient enhances significantly compared to the bulk SrTiO3.The Ar ion irradiation induced effects in thermoelectric properties of TiO2/STO bilayer have been investigated by X-ray Diffraction, alongwith X-ray Absorption spectroscopy. The bilayer was deposited on silicon substrate by Pulsed laser deposition at a substrate temperature of 700°C and then irradiated by using 1 MeV Ar ion beam at a fluence of 1×1016 ions/cm2. The Seebeck coefficient and resistivity measurements were performed by the bridge method and two probe measurements. It was found that resistivity of the bilayer drastically reduces after Ar irradiation and Seebeck coefficient enhances significantly compared to the bulk SrTiO3.