用解析模型计算门负载延迟

A. Kahng, S. Muddu
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引用次数: 4

摘要

在亚微米技术中,门延迟主要由门负载延迟而不是固有门延迟决定。虽然计算门负载延迟(或总门延迟)的常用方法是通过延迟表(或k因子方程),但与延迟表方法相关的重要方法论问题。本文提出了一种栅极驱动器模型,该模型采用Thevenin等效电路,由一个斜坡电压源和一个与栅极负载串联的驱动电阻组成。斜坡电压源的转换时间由栅极转换表获得。然后,我们使用Thevenin驱动模型开发了解析门延迟公式,并使用上升和下降斜坡输入下的各种门负载模型对负载进行建模。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Gate load delay computation using analytical models
With submicron technologies, gate delays are dominated by gate load delays rather than intrinsic gate delays. While the common approach for computing gate load delay (or total gate delay) is through delay tables (or k-factor equations), there are important methodology problems associated with the delay table approach. In this paper, we propose a gate driver model with a Thevenin equivalent circuit consisting of a ramp voltage source whose slew time is obtained from the gate slew tables, and a driver resistance in series with the gate load. We then develop analytical gate delay formulas using this Thevenin driver model and modeling the load with various gate load models under both rising and falling ramp input.
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