Chun-Kai Liu, Chiu Po-Kai, Yuan-Cheng Huang, J. Syu, Yao-Shun Chen, Yu-An Chou, Kuang-Hung Wu, Wen-Yang Pan
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Thermal Design of SiC Power Module for EV/HEV Applications
Silicon-Carbide semiconductor device has the benefits of higher breakdown voltage, higher current, higher operating temperature, higher switching speed, and lower switching loss over Si devices. It offers system-level benefits of high efficiency and power density to EV/HEV powertrain. However, thermal management solutions face new challenges in mitigating the increased heat flux in powertrain due to increased power density. High heat flux can raise the temperature of power devices and ICs, which reduces reliability and efficiency, and can lead to failure. In this paper, we studied the thermal design of the 1200 V, 400A SiC power module for EV/HEV applications by numerical simulation and experimental measurement. The effects of powering conditions, inlet temperature, and liquid flow rate are studied comprehensively.
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