mapbi3薄膜中光电导电性的本征极化来源

R. Saraf, C. Saguy, V. Maheshwari, Hemaprabha Elangovan, Y. Ivry
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引用次数: 4

摘要

杂化卤化物钙钛矿(HHP)薄膜具有优异的光电性能。这些材料被用于高效太阳能电池和光导技术。离子迁移和极化都被认为是光电活性增强的来源,但这些有利器件特性的确切起源仍然难以捉摸。在这里,我们结合了微尺度和器件尺度的表征来证明极化辅助电导率控制着HHP薄膜的光电导率。在光和变温条件下,导电原子力显微镜显示光电流具有方向性,并且在四方向立方转变时被抑制。结果表明,基于极化的电导率由光增强,而暗电导率由非定向离子迁移主导,这一点已被大规模装置测量证实。根据极化畴的非易失性,光导记忆行为被证明。了解HHP中光电活动的起源可以设计具有增强功能的器件,并为光电记忆器件奠定基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Intrinsic-polarization origin of photoconductivity in MAPbI3thin films
Hybrid-halide perovskite (HHP) films exhibit exceptional photo-electric properties. These materials are utilized for highly efficient solar cells and photoconductive technologies. Both ion migration and polarization have been proposed as the source of enhanced photoelectric activity, but the exact origin of these advantageous device properties has remained elusive. Here, we combined microscale and device-scale characterization to demonstrate that polarization-assisted conductivity governs photoconductivity in thin HHP films. Conductive atomic force microscopy under light and variable temperature conditions showed that the photocurrent is directional and is suppressed at the tetragonal-to-cubic transformation. It was revealed that polarization-based conductivity is enhanced by light, whereas dark conductivity is dominated by non-directional ion migration, as was confirmed by large-scale device measurements. Following the non-volatile memory nature of polarization domains, photoconductive memristive behavior was demonstrated. Understanding the origin of photoelectric activity in HHP allows designing devices with enhanced functionality and lays the grounds for photoelectric memristive devices.
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