{"title":"半导体激光器在激光状态下的外辐射放大","authors":"K. B. Dedushenko, M. V. Zverkov, A. Mamaev","doi":"10.1070/QE1992V022N07ABEH003554","DOIUrl":null,"url":null,"abstract":"Equations are derived to describe a semiconductor laser with injection of external radiation. The case of small signal amplification is analyzed in detail. It is shown that the transmission spectrum of a laser in the lasing state has side maxima separated from the natural resonance by several gigahertz. The results of an experimental study of this phenomenon are presented. A satisfactory agreement between the theoretical and experimental results is demonstrated.","PeriodicalId":21878,"journal":{"name":"Soviet Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1992-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Amplification of external radiation in a semiconductor laser in the lasing state\",\"authors\":\"K. B. Dedushenko, M. V. Zverkov, A. Mamaev\",\"doi\":\"10.1070/QE1992V022N07ABEH003554\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Equations are derived to describe a semiconductor laser with injection of external radiation. The case of small signal amplification is analyzed in detail. It is shown that the transmission spectrum of a laser in the lasing state has side maxima separated from the natural resonance by several gigahertz. The results of an experimental study of this phenomenon are presented. A satisfactory agreement between the theoretical and experimental results is demonstrated.\",\"PeriodicalId\":21878,\"journal\":{\"name\":\"Soviet Journal of Quantum Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-07-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Soviet Journal of Quantum Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1070/QE1992V022N07ABEH003554\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Soviet Journal of Quantum Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1070/QE1992V022N07ABEH003554","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Amplification of external radiation in a semiconductor laser in the lasing state
Equations are derived to describe a semiconductor laser with injection of external radiation. The case of small signal amplification is analyzed in detail. It is shown that the transmission spectrum of a laser in the lasing state has side maxima separated from the natural resonance by several gigahertz. The results of an experimental study of this phenomenon are presented. A satisfactory agreement between the theoretical and experimental results is demonstrated.
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