动态内禀芯片ID采用32nm高k /金属栅极SOI嵌入式DRAM

2012 Symposium on VLSI Circuits (VLSIC) Pub Date : 2012-06-13 DOI:10.1109/VLSIC.2012.6243832

D. Fainstein, S. Rosenblatt, A. Cestero, N. Robson, T. Kirihata, S. Iyer

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引用次数: 11

摘要

在32nm SOI嵌入式DRAM中，随机固有芯片ID方法利用保留故障生成一对4Kb二进制字符串。硬件测试结果表明，ID重叠距离均值为0.58，σ=0.76，对346个芯片进行了100%的认证。解析模型预测>;106个部件的99.999%唯一id。

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Dynamic intrinsic chip ID using 32nm high-K/metal gate SOI embedded DRAM

A random intrinsic chip ID method generates a pair of 4Kb binary strings using retention fails in 32nm SOI embedded DRAM. Hardware results show ID overlap distance mean=0.58 and σ=0.76 and demonstrate 100% authentication for 346 chips. The analytical model predicts >; 99.999% unique IDs for 106 parts.

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2012 Symposium on VLSI Circuits (VLSIC)

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