各向同性质子辐照对ITO/InP太阳能电池性能的影响

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105833

N. Pearsall, C. Goodbody, O. Oparaku, A. Dollery, R. Hill

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引用次数: 4

摘要

本文介绍了在ITO/InP太阳能电池上的质子暴露实验结果，质子能量范围在2 - 50 MeV之间，影响范围高达1E12质子/cm/sup 2/。在辐照期间，电池被安装在摇杆上，以模拟半球形各向同性辐射。ITO/InP电池的数据与在相同条件下辐照的市售GaAs和Si电池的数据进行了比较。在所有质子能量下，ITO/InP细胞的降解率明显低于其他类型的细胞。可以得出结论，这两种类型的细胞以相似的方式工作。从数据来看，ITO/InP结构似乎与同结结构在抗辐射方面具有相同的优势。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of isotropic proton irradiation on the performance of ITO/InP solar cells

Results of proton exposure experiments on ITO/InP solar cells, for a range of proton energies between 2 and 50 MeV and for a range of fluences up to 1E12 proton/cm/sup 2/, are presented. The cells are mounted on a rocker during irradiation, to simulate hemispherical isotropic radiation. Data from ITO/InP cells are compared to those for commercially available GaAs and Si cells irradiated under the same conditions. At all proton energies, the ITO/InP cells showed a significantly lower percentage of degradation than the other types of cell. It is concluded that the two types of cell operate in a similar manner. From the data, the ITO/InP structure appears to present the same advantages with respect to radiation resistance as does the homojunction structure.<>

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来源期刊

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference

CiteScore

1.40

自引率

0.00%

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