晶圆级封装的可靠性设计

W. Driel, H. P. Hochstenbach, Guoqi Zhang
{"title":"晶圆级封装的可靠性设计","authors":"W. Driel, H. P. Hochstenbach, Guoqi Zhang","doi":"10.1109/ESIME.2006.1643961","DOIUrl":null,"url":null,"abstract":"Wafer level packages are one of the most advanced packaging concepts. It combines the advantages of flip chip with conventional surface mount technologies. In recent years we have seen a tremendous growth in the application of wafer level packages, both in quantities as well as in the number of products where they are implemented. The technology is, however, not without it's challenges with 1st and 2nd level reliability issues. For instance, the limit on the size of wafer level packages has to do with the 2nd level, or solder bump, reliability. This paper highlights our major research and development results on understanding and enhancing the 1st and 2nd level reliability of wafer level packages using combined experimental and virtual prototyping (thermal, mechanical and thermo-mechanical) techniques. Typical 1st level reliability problems within wafer level packages are cracking of repassivation materials, fatigue of bond over active pads, and cracks within the under bump metallisation. To investigate the physics of failure for these problems, dedicated parametric finite element models are constructed including the thin IC layers. Different repassivation materials and different structures are explored to their potential reliability benefits. By combining the experimental results with reliability prediction models and advanced simulation-based optimisation methods, the complete wafer level package design space in terms of distance from neutral point, PCB thickness, PCB copper layout, and use of improved structures is explored. Our numerical results explain the experimentally obtained reliability results for the effects of package size and PCB thickness. Even more, they indicate that by properly designing the copper layout in the PCB, a 10-20% improvement can be achieved for the WLP 2nd level reliability","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"118 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Design for Reliability of Wafer Level Packages\",\"authors\":\"W. Driel, H. P. Hochstenbach, Guoqi Zhang\",\"doi\":\"10.1109/ESIME.2006.1643961\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wafer level packages are one of the most advanced packaging concepts. It combines the advantages of flip chip with conventional surface mount technologies. In recent years we have seen a tremendous growth in the application of wafer level packages, both in quantities as well as in the number of products where they are implemented. The technology is, however, not without it's challenges with 1st and 2nd level reliability issues. For instance, the limit on the size of wafer level packages has to do with the 2nd level, or solder bump, reliability. This paper highlights our major research and development results on understanding and enhancing the 1st and 2nd level reliability of wafer level packages using combined experimental and virtual prototyping (thermal, mechanical and thermo-mechanical) techniques. Typical 1st level reliability problems within wafer level packages are cracking of repassivation materials, fatigue of bond over active pads, and cracks within the under bump metallisation. To investigate the physics of failure for these problems, dedicated parametric finite element models are constructed including the thin IC layers. Different repassivation materials and different structures are explored to their potential reliability benefits. By combining the experimental results with reliability prediction models and advanced simulation-based optimisation methods, the complete wafer level package design space in terms of distance from neutral point, PCB thickness, PCB copper layout, and use of improved structures is explored. Our numerical results explain the experimentally obtained reliability results for the effects of package size and PCB thickness. Even more, they indicate that by properly designing the copper layout in the PCB, a 10-20% improvement can be achieved for the WLP 2nd level reliability\",\"PeriodicalId\":60796,\"journal\":{\"name\":\"微纳电子与智能制造\",\"volume\":\"118 1\",\"pages\":\"1-6\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"微纳电子与智能制造\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://doi.org/10.1109/ESIME.2006.1643961\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"微纳电子与智能制造","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ESIME.2006.1643961","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

晶圆级封装是最先进的封装概念之一。它结合了倒装芯片与传统表面贴装技术的优点。近年来,我们看到晶圆级封装的应用有了巨大的增长,无论是在数量上还是在产品数量上。然而,这项技术在一级和二级可靠性问题上并非没有挑战。例如,晶圆级封装的尺寸限制与第2级或焊点可靠性有关。本文重点介绍了我们在利用实验和虚拟样机(热、机械和热机械)技术来理解和提高晶圆级封装的一级和二级可靠性方面的主要研究和发展成果。晶圆级封装中典型的一级可靠性问题是再钝化材料的开裂,主动焊盘上的粘结疲劳,以及凹凸金属化内部的裂纹。为了研究这些问题的物理失效,建立了包括薄集成电路层在内的专用参数有限元模型。探讨了不同的再钝化材料和不同的结构对可靠性的潜在效益。通过将实验结果与可靠性预测模型和先进的基于仿真的优化方法相结合,从中点距离、PCB厚度、PCB铜布局和改进结构的使用等方面探索了完整的晶圆级封装设计空间。我们的数值结果解释了实验得到的封装尺寸和PCB厚度影响的可靠性结果。更重要的是,他们表明,通过正确设计PCB中的铜布局,可以实现10-20%的WLP二级可靠性改进
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design for Reliability of Wafer Level Packages
Wafer level packages are one of the most advanced packaging concepts. It combines the advantages of flip chip with conventional surface mount technologies. In recent years we have seen a tremendous growth in the application of wafer level packages, both in quantities as well as in the number of products where they are implemented. The technology is, however, not without it's challenges with 1st and 2nd level reliability issues. For instance, the limit on the size of wafer level packages has to do with the 2nd level, or solder bump, reliability. This paper highlights our major research and development results on understanding and enhancing the 1st and 2nd level reliability of wafer level packages using combined experimental and virtual prototyping (thermal, mechanical and thermo-mechanical) techniques. Typical 1st level reliability problems within wafer level packages are cracking of repassivation materials, fatigue of bond over active pads, and cracks within the under bump metallisation. To investigate the physics of failure for these problems, dedicated parametric finite element models are constructed including the thin IC layers. Different repassivation materials and different structures are explored to their potential reliability benefits. By combining the experimental results with reliability prediction models and advanced simulation-based optimisation methods, the complete wafer level package design space in terms of distance from neutral point, PCB thickness, PCB copper layout, and use of improved structures is explored. Our numerical results explain the experimentally obtained reliability results for the effects of package size and PCB thickness. Even more, they indicate that by properly designing the copper layout in the PCB, a 10-20% improvement can be achieved for the WLP 2nd level reliability
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
145
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信