用于0.13μm SiGe BiCMOS的128像素0.56THz实时近场成像传感阵列

P. Hillger, R. Jain, J. Grzyb, L. Mavarani, B. Heinemann, G. MacGrogan, P. Mounaix, T. Zimmer, U. Pfeiffer
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引用次数: 14

摘要

实时太赫兹摄像机被认为是许多应用的关键使能系统。不幸的是,它们的空间分辨率基本上受到衍射极限的限制。在太赫兹域使用近场扫描光学显微镜(NSOM)来突破这一限制[1]。最近报道的基于硅技术的太赫兹近场传感器与NSOM相比,在传感器灵敏度、系统成本和扫描时间方面有了显著的改进[2,3]。然而,到目前为止,只有单像素的无调制连续波源实现,由于检测器1/f噪声限制了传感器的动态范围(DR)。本文将近场传感的研究扩大到由多个具有视频速率成像能力的超分辨率像素组成的更大表面。128像素0.56太赫兹成像阵列包括所有功能,如照明,传感,检测和数字读出在单个硅芯片上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS
Real-time terahertz video cameras are regarded as key enabler systems for numerous applications. Unfortunately, their spatial resolution is fundamentally restricted by the diffraction limit. Near-field-scanning optical microscopy (NSOM) is used in the THz domain to break through this limit [1]. Recently reported THz near-field sensors based on silicon technology promise significant improvements compared to NSOM with respect to sensor sensitivity, system cost, and scanning time [2,3]. However, only single-pixel implementations have been presented with unmodulated CW sources so far, which limits the sensors dynamic range (DR) due to detector 1/f noise. This paper scales-up the research of near-field sensing into larger surfaces made of a plurality of super-resolution pixels with video-rate imaging capabilities. The 128-pixel 0.56THz imaging array includes all functions such as illumination, sensing, detection, and digital readout on a single silicon chip.
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