И. Ю. Забавичев, Александр Сергеевич Пузанов, С. В. Оболенский
{"title":"单一辐射缺陷集群转换晶体管存储状态的影响","authors":"И. Ю. Забавичев, Александр Сергеевич Пузанов, С. В. Оболенский","doi":"10.21883/ftp.2023.04.55897.15k","DOIUrl":null,"url":null,"abstract":"The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"272 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Влияние процесса образования единичного кластера радиационных дефектов на переключение состояния транзисторной ячейки памяти\",\"authors\":\"И. Ю. Забавичев, Александр Сергеевич Пузанов, С. В. Оболенский\",\"doi\":\"10.21883/ftp.2023.04.55897.15k\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.\",\"PeriodicalId\":24054,\"journal\":{\"name\":\"Физика и техника полупроводников\",\"volume\":\"272 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Физика и техника полупроводников\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21883/ftp.2023.04.55897.15k\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Физика и техника полупроводников","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/ftp.2023.04.55897.15k","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Влияние процесса образования единичного кластера радиационных дефектов на переключение состояния транзисторной ячейки памяти
The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
