厚膜电容器用低燃烧Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/-Pb/sub 5/Ge/sub 2/SiO/sub 11/组合物

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1994-08-07 DOI:10.1109/ISAF.1994.522436

Y.D. Kim, S. M. Landin, I. Cornejo, M. J. Haun

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引用次数: 0

摘要

商用铁电厚膜具有高介电常数的电容器应用。然而，这些组合物在特征烧成温度(850/spl /900/spl℃)下通常不能很好地致密成厚膜，因此需要封装剂提供环境稳定性。基于Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ (PMN)-PbTiO/sub 3/ (PT)与Pb/sub 5/Ge/sub 2/SiO/sub 11/ (PGS)的组合，提出了可在低温下烧制的具有良好介电性能的铁电组合物。PGS在/spl /724/spl℃下熔化，在低温下引起PMN-PT的液相烧结。PMN-PT的厚膜样品，添加30%重量百分比的PGS和5%重量百分比的PbO，在850/spl℃下加热10分钟，室温1 KHz介电常数大于1500，耗散系数小于6%。初步结果表明，这些组合物与商业银厚膜导体浆料(杜邦6160)兼容。

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Low-firing Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/-Pb/sub 5/Ge/sub 2/SiO/sub 11/ compositions for thick film capacitor applications

Commercial ferroelectric thick films have been developed with high dielectric constants for capacitor applications. However, these compositions typically do not densify well in thick film form at characteristic firing temperatures (850/spl sim/900/spl deg/C), and thus require encapsulants to provide environmental stability. In this paper, ferroelectric compositions that can be fired at low temperatures with useful dielectric properties for thick film application are presented based on the combination of Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/ (PMN)-PbTiO/sub 3/ (PT) with Pb/sub 5/Ge/sub 2/SiO/sub 11/ (PGS). The PGS melts at /spl ap/724/spl deg/C, and causes liquid phase sintering of the PMN-PT at low temperatures. Thick film samples of PMN-PT with 30 weight percent PGS and 5 weight percent PbO additions densify to closed porosity fired at 850/spl deg/C for 10 minutes with a room temperature 1 KHz dielectric constant greater than 1500 and a dissipation factor less than 6%. Preliminary results indicate that these compositions are compatible with a commercial silver thick film conductor paste (DuPont 6160).

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Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics

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