表面InAs/InP量子阱:外延生长与表征

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147421

A. Tabata, T. Benyattou, G. Guillot, Z. Sobiesierski, S. Clark, R. Williams, M. Gendry, G. Hollinger, P. Viktorovitch

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引用次数: 1

摘要

讨论了用分子束外延法在InP上生长的InAs表面量子阱的外延生长和表征。描述了InAs层的结构特性。给出了光致发光结果。该系统显示出InAs量子阱中的约束态与InAs表面态之间几乎没有耦合。

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Surface InAs/InP quantum wells: epitaxial growth and characterization

The epitaxial growth and characterization of InAs surface quantum wells grown on InP by molecular beam epitaxy (MBE) are discussed. The structural properties of the InAs layers are described. Photoluminescence results are presented. This system shows practically no coupling between the confined states in the InAs quantum well and the InAs surface states.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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