气溶胶沉积法在耐热不锈钢基体上制备BaTiO3薄膜的压电性能和微观结构

Y. Kawakami, Masato Watanabe, K. Arai, S. Sugimoto
{"title":"气溶胶沉积法在耐热不锈钢基体上制备BaTiO3薄膜的压电性能和微观结构","authors":"Y. Kawakami, Masato Watanabe, K. Arai, S. Sugimoto","doi":"10.14723/TMRSJ.41.279","DOIUrl":null,"url":null,"abstract":"Lead (Pb)-free piezoelectric films formed on metallic substrates are of interest for advanced piezoelectric devices. BaTiO3 films with a thickness of 10 μm were deposited on Fe-Cr-Al based heat-resistant stainless-steel substrates using aerosol deposition at room temperature. The BT film annealed at 1473 K for 1h had 1.2μmdiameter grains, of which crystal phase was the perovskite single phase of the tetragonal crystal system. The dielectric constant was 2200, and the dielectric loss was 0.02. Piezoelectric displacement of the cantilevers with annealed BT films on stainless-steel substrates improved with increased annealing temperature. The piezoelectric constant d31 of film annealed at 1473 K was -56 pm/V.","PeriodicalId":23220,"journal":{"name":"Transactions-Materials Research Society of Japan","volume":"33 1","pages":"279-283"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Piezoelectric Properties and Microstructure of BaTiO3 Films on Heat-Resistant Stainless-Steel Substrates Deposited Using Aerosol Deposition\",\"authors\":\"Y. Kawakami, Masato Watanabe, K. Arai, S. Sugimoto\",\"doi\":\"10.14723/TMRSJ.41.279\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lead (Pb)-free piezoelectric films formed on metallic substrates are of interest for advanced piezoelectric devices. BaTiO3 films with a thickness of 10 μm were deposited on Fe-Cr-Al based heat-resistant stainless-steel substrates using aerosol deposition at room temperature. The BT film annealed at 1473 K for 1h had 1.2μmdiameter grains, of which crystal phase was the perovskite single phase of the tetragonal crystal system. The dielectric constant was 2200, and the dielectric loss was 0.02. Piezoelectric displacement of the cantilevers with annealed BT films on stainless-steel substrates improved with increased annealing temperature. The piezoelectric constant d31 of film annealed at 1473 K was -56 pm/V.\",\"PeriodicalId\":23220,\"journal\":{\"name\":\"Transactions-Materials Research Society of Japan\",\"volume\":\"33 1\",\"pages\":\"279-283\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Transactions-Materials Research Society of Japan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.14723/TMRSJ.41.279\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transactions-Materials Research Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.14723/TMRSJ.41.279","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

在金属衬底上形成的无铅压电薄膜是先进压电器件的研究方向。采用常温气溶胶沉积法在Fe-Cr-Al基耐热不锈钢基体上沉积了厚度为10 μm的BaTiO3薄膜。在1473 K下退火1h的BT膜晶粒直径为1.2μm,晶相为四方晶系的钙钛矿单相。介电常数为2200,介电损耗为0.02。在不锈钢衬底上退火BT膜悬臂梁的压电位移随退火温度的升高而提高。1473 K退火后薄膜的压电常数d31为-56 pm/V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Piezoelectric Properties and Microstructure of BaTiO3 Films on Heat-Resistant Stainless-Steel Substrates Deposited Using Aerosol Deposition
Lead (Pb)-free piezoelectric films formed on metallic substrates are of interest for advanced piezoelectric devices. BaTiO3 films with a thickness of 10 μm were deposited on Fe-Cr-Al based heat-resistant stainless-steel substrates using aerosol deposition at room temperature. The BT film annealed at 1473 K for 1h had 1.2μmdiameter grains, of which crystal phase was the perovskite single phase of the tetragonal crystal system. The dielectric constant was 2200, and the dielectric loss was 0.02. Piezoelectric displacement of the cantilevers with annealed BT films on stainless-steel substrates improved with increased annealing temperature. The piezoelectric constant d31 of film annealed at 1473 K was -56 pm/V.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信