基于90°混合耦合器的相位插值移相器,用于w波段及以上的相控阵应用

Sadia Afroz, Kwang-Jin Koh
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引用次数: 10

摘要

提出了一种基于90°混合耦合器的无源相位插补器,用于0.13 μm SiGe BiCMOS工艺中w波段5位移相器的设计。在所提出的移相器中,首先由VGAs进行幅度加权。然后,90°混合执行I/Q分相和相位插值来合成所有四象限相位。这样,相位合成的精度就不容易受到放大器负载效应的影响。此外,通过用低匹配阻抗级联所有构建块,移相器对寄生电容的敏感性降低,适合毫米波应用。移相器针对发射机应用进行了优化,所有5位相位状态的峰值增益变化在94 GHz时为4.8-9.7 dB。测量的均方根增益误差<;在93-108 GHz范围内1.6 dB。测量的均方根相位误差<;94 GHz时1.5°。在94ghz时,输入P-1dB为- 13dbm,输出P-1dB为-4.7 dBm。芯片从2.2 V电源电压消耗37 mW。芯片尺寸为1.87×0.75 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
90° hybrid-coupler based phase-interpolation phase-shifter for phased-array applications at W-band and beyond
This paper presents a 90° hybrid-coupler based passive phase interpolator that is utilized to design a W-band 5-bit phase shifter in 0.13 μm SiGe BiCMOS process. In the proposed phase shifter, amplitude weighting is made first by VGAs. Then, a 90°-hybrid performs I/Q phase splitting and phase interpolation to synthesize all four quadrant phases. In this way, the accuracy of the phase synthesis is less vulnerable to an amplifier loading effect. Further, by cascading all building blocks with a low matched impedance the phase shifter will be less sensitive to parasitic capacitance, suitable for mm-Wave applications. The phase shifter is optimized for a transmitter application and the measured peak-to-peak gain variation for all 5-bit phase states is 4.8-9.7 dB at 94 GHz. The measured rms gain error is <; 1.6 dB over 93-108 GHz. The measured RMS phase error is <; 1.5° at 94 GHz. The input and output P-1dB is -13 dBm and -4.7 dBm, respectively, at 94 GHz. The chip consumes 37 mW from 2.2 V supply voltage. The chip size is 1.87×0.75 mm2.
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