Si:P太赫兹激光的激发光谱与Ge:Te中的红外光导

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. Pub Date : 2004-01-01 DOI:10.1109/ICIMW.2004.1422186

H. Nakata, A. Yokoyama, T. Hatou, T. Ohyama, N. Tsubouchi, S. Pavlov, H. W. Heubers

{"title":"Si:P太赫兹激光的激发光谱与Ge:Te中的红外光导","authors":"H. Nakata, A. Yokoyama, T. Hatou, T. Ohyama, N. Tsubouchi, S. Pavlov, H. W. Heubers","doi":"10.1109/ICIMW.2004.1422186","DOIUrl":null,"url":null,"abstract":"We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO/sub 2/ lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.","PeriodicalId":13627,"journal":{"name":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","volume":"1 1","pages":"507-508"},"PeriodicalIF":0.0000,"publicationDate":"2004-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te\",\"authors\":\"H. Nakata, A. Yokoyama, T. Hatou, T. Ohyama, N. Tsubouchi, S. Pavlov, H. W. Heubers\",\"doi\":\"10.1109/ICIMW.2004.1422186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO/sub 2/ lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.\",\"PeriodicalId\":13627,\"journal\":{\"name\":\"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.\",\"volume\":\"1 1\",\"pages\":\"507-508\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIMW.2004.1422186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIMW.2004.1422186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了自由电子激光(FEL)和CO/sub / 2激光激发Si:P的Ge:Te和THz激光的红外光导率。在约120 meV范围内，随光子能量的增加，发射强度减小。Ge:Te的光导光谱具有LO声子结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te

We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO/sub 2/ lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

自引率

0.00%

发文量