使用双量子阱GaInNAs可饱和吸收器的1550 nm锁模VECSEL

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science Pub Date : 2008-05-04 DOI:10.1109/CLEO.2008.4551397

A. Khadour, S. Bouchoule, G. Aubin, J. Tourrenc, A. Miard, J. Harmand, J. Decobert, J. Oudar

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引用次数: 1

摘要

本文报道了一种2 GHz锁模垂直外腔面发射激光器，其增益结构为双量子阱谐振型GaInNAs半导体可饱和吸收镜(SESAM)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mode locked 1550 nm VECSEL using a two quantum wells GaInNAs Saturable Absorber

We report a 2 GHz mode locked vertical external cavity surface emitting laser using a hybrid metal-metamorphic Bragg mirror on the gain structure with a resonant two quantum wells GaInNAs semiconductor saturable absorber mirror (SESAM).

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来源期刊

2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science

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