用于被动调q 1.3 /spl μ m-1.5 /spl μ m微激光器的外延Co/sup 2+/:YAG层

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) Pub Date : 2003-06-22 DOI:10.1109/CLEOE.2003.1312151

J. Sarnecki, K. Kopczyński, J. Skwarcz, Z. Mierczyk, J. Młyńczak

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引用次数: 0

摘要

本文研究了用LPE技术直接沉积在Er,Yb:YAG活性衬底上的Co/sup 2+/:YAG薄饱和吸收层。这种外延结构设计用于制作工作在1530nm的调q微芯片激光器。采用标准等温LPE浸镀技术，在过冷熔融石榴石助熔剂(PbO-B/sub 2/O/sub 3/)高温溶液中生长Co/sup 2+/:YAG层。

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The epitaxial Co/sup 2+/:YAG layers for passively Q-switched 1.3 /spl mu/m-1.5 /spl mu/m microlasers

This article deals with the investigation of a thin saturable absorber layer of Co/sup 2+/:YAG deposited directly on the active Er,Yb:YAG substrate, by means of LPE technique. Such epitaxial structure is designed to fabricate Q-switched microchip laser operating at 1530 nm. The Co/sup 2+/:YAG layers were grown from a supercooled molten garnet-flux (PbO-B/sub 2/O/sub 3/) high temperature solution using a standard isothermal LPE dipping technique.

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2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)

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