功率GaN场效应管高集成度栅极驱动器120V/ns输出压转率增强技术及高压箝位电路

Hsiang-An Yang, Chao-Chang Chiu, Shin-Chi Lai, Jui-Lung Chen, Chih-Wei Chang, Che-Hao Meng, Ke-Horng Chen, Chinder Wey, Ying-Hsi Lin, Chao-Cheng Lee, Jian-Ru Lin, Tsung-Yen Tsai, Hsin-Yu Luo
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引用次数: 4

摘要

高功率密度是电源变换器努力追求的重点。然而,功率变换器的栅极驱动器很少能在高电压下实现快速工作频率的开关。本文提出了一种采用压摆率增强(SRE)技术的半桥式驱动器,其开关频率在700V电源电压下可提高到25MHz。此外,所提出的高压箝位电路确保所有电路在安全区域内工作,而不会在自举操作中出现过电压问题。通过专门开发的高压高速(HVHS)工艺,高侧和低侧电路可以通过嵌入在电平转移器器件中的隔离井很好地屏蔽,以最小化芯片尺寸。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
120V/ns output slew rate enhancement technique and high voltage clamping circuit in high integrated gate driver for power GaN FETs
High power density is a key point that power converters endeavor to pursue. However, it is rare that gate driver of power converter can switch under high supply voltage with a fast operation frequency. In this paper, a half-bridge driver with the slew rate enhancement (SRE) technique is proposed and its switching frequency can be increased to 25MHz under a 700V supply voltage. Besides, the proposed high voltage clamping circuit ensures all circuits operating in a safe region without any overvoltage problems in the bootstrap operation. With specifically developed high voltage high speed (HVHS) process, high-side and low-side circuits can be well shielded by the isolation well which is embedded in the level shifter device to minimize chip size.
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