退火温度对TiC薄膜微观结构和电阻率的影响

Litipu Aihaiti, K. Tuokedaerhan, B. Sadeh, M. Zhang, Xiangqian Shen, Abuduwaili Mijiti
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引用次数: 9

摘要

采用非反应同步双磁控溅射法制备了碳化钛(TiC)薄膜。沉积后,在不同温度下进行高真空退火。本文主要讨论了沉积方法和退火温度对TiC薄膜微观结构、表面形貌、键合状态和电阻率的影响。XRD (x射线衍射)结果表明,TiC薄膜在不退火的情况下仍能形成晶体,且退火后薄膜的结晶度有所提高。TiC薄膜的晶粒尺寸随退火温度的变化在8.5 ~ 14.7 nm之间。从SEM(扫描电子显微镜)图像可以看出,薄膜表面由不规则的颗粒组成,当温度达到800℃时,颗粒的形状变为球形。膜的生长速度约为30.8 nm/min。在XPS (x射线光电子能谱)光谱中观察到氧相关峰,这是由于暴露于空气时膜表面氧原子的吸收。拉曼光谱证实了TiC晶体和非晶态碳的形成。随着退火温度的升高,TiC薄膜的电阻率从666.73单调降低到86.01 μΩ·cm。总之,本研究制备的TiC薄膜结晶度好,热稳定性好,电阻率低,可以满足金属栅极应用的要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Annealing Temperature on Microstructure and Resistivity of TiC Thin Films
Titanium carbide (TiC) thin films were prepared by non-reactive simultaneous double magnetron sputtering. After deposition, all samples were annealed at different temperatures under high-vacuum conditions. This paper mainly discusses the influence of deposition methods and annealing temperatures on microstructure, surface topography, bonding states and electrical resistivity of TiC films. XRD (X-ray diffraction) results show that TiC thin films can still form crystals without annealing, and the crystallinity of thin films is improved after annealing. The estimated grain size of the TiC films varies from 8.5 nm to 14.7 nm with annealing temperature. It can be seen from SEM (scanning electron microscope) images that surfaces of the films are composed of irregular particles, and when the temperature reaches to 800 °C, the shape of the particles becomes spherical. Growth rate of film is about 30.8 nm/min. Oxygen-related peaks were observed in XPS (X-ray photoelectron spectroscopy) spectra, which is due to the absorption of oxygen atoms on the surface of the film when exposed to air. Raman spectra confirm the formation of TiC crystals and amorphous states of carbon. Resistivity of TiC films decreases monotonically from 666.73 to 86.01 μΩ·cm with the increase in annealing temperature. In brief, the TiC thin films prepared in this study show good crystallinity, thermal stability and low resistivity, which can meet the requirements of metal gate applications.
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