250mV-950mV 1.1Tbps/W双仿射映射Sbox复合场SMS4加解密加速器

Sudhir K. Satpathy, S. Mathew, Vikram B. Suresh, M. Anders, Himanshu Kaul, A. Agarwal, S. Hsu, Gregory K. Chen, R. Krishnamurthy
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引用次数: 2

摘要

采用14nm三栅极CMOS,研制了10k门4Gbps统一加解密SMS4中文密码加速器,工作频率为1GHz, 750mV, 25°C,总功耗为12mW。双仿射映射Sbox电路使用GF(24)2数据路径实现逆计算,通过消除查找表(LUT),使加速器面积减少33%。最优复合场约简多项式、反辅助圆形常数生成电路和具有在线键扩展的混合数据路径比传统设计节省了14%的面积,导致紧凑的布局占用2445μm2。低电压优化可实现低至250mV的稳健亚阈值工作,在330mV时测量的峰值能效为1.1Tbps/W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
250mV–950mV 1.1Tbps/W double-affine mapped Sbox based composite-field SMS4 encrypt/decrypt accelerator in 14nm tri-gate CMOS
A 10K-gate 4Gbps unified encrypt/decrypt SMS4 Chinese cryptographic accelerator is fabricated in 14nm tri-gate CMOS, operating at 1GHz, 750mV, 25°C with total power consumption of 12mW. Double-affine mapped Sbox circuits enable inverse computation using GF(24)2 data-path, resulting in 33% reduction in accelerator area by elimination of look-up tables (LUT). Optimal composite-field reduction polynomials, counter-assisted round constant generation circuits, and a hybrid data-path with in-line key-expansion provide additional 14% area saving over traditional designs resulting in a compact layout occupying 2445μm2. Low voltage optimizations enable robust sub-threshold operation down to 250mV, with peak energy-efficiency of 1.1Tbps/W measured at 330mV.
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