LaNi9Si4:晶体结构和电学性质

Ukrainian Chemistry Journal Pub Date : 2023-06-26 DOI:10.33609/2708-129x.89.05.2023.3-12

B. Belan, Svitala Pukas, M. Dzevenko, M. Manyako, B. Kuzhel, R. Gladyshevskii

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引用次数: 0

摘要

用x射线粉末法和单晶法研究了LaNi9Si4化合物的结构。该硅化物结晶为CeNi8.5Si4结构类型:空间群I4 mcm, Pearson符号tI56， η = 7.86415(6)， η = 11.5101(1) Å， RB = 0.0653;x -射线单晶数据的R = 0.0220, wR = 0.0734, R = 7.83933(17)， R = 11.4472(5) Å。不同于原型CeNi8.5Si4.5的Wyckoff位置4d被Ni和Si原子的混合物占据，在三元硅化物LaNi9Si4的结构中，原子在所有Wyckoff位置上都是有序的。此外，还研究了该化合物的电学性能。电阻率的温度依赖性表现为金属行为(ρ0 = 121.60 μΩ∙cm， θD = 191 K, A = 2.2·10-9 μΩ∙m∙K-3)。

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LaNi9Si4: CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES

The structure of LaNi9Si4 compound has been investigated by X-ray powder ans single crystal method. This silicide crystalize in CeNi8.5Si4 structure type: space group I4 mcm, Pearson symbol tI56, а = 7.86415(6), с = 11.5101(1) Å, RB = 0.0653; а = 7.83933(17), с = 11.4472(5) Å, R = 0.0220, wR = 0.0734 for X-ray single crystal data. Unlike the prototype CeNi8.5Si4.5, where the Wyckoff position 4d is occupied by mixture of Ni and Si atoms, in the structure of the ternary silicide LaNi9Si4, the atoms are ordered in all Wyckoff positions. Additionally, the electrical properties for the compound were investigated. The temperature dependence of the electrical resistivity exhibits metal behaviour (ρ0 = 121.60 μΩ∙cm, θD = 191 K, A = 2.2·10-9 μΩ∙m∙K-3).

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Ukrainian Chemistry Journal

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