{"title":"太赫兹截止频率硅带间隧道二极管的建模与射频分析","authors":"Kyung Rok Kim, I. Kang, R. Dutton","doi":"10.1109/SNW.2010.5562553","DOIUrl":null,"url":null,"abstract":"We demonstrated RF analysis framework based on tunnel velocity model for Si IBT diodes with ultra-thin tunnel barriers. Microwave and sub-millimeter wave properties of the non-linear NDR characteristics have been investigated in a numerical way with various structural design. The intrinsic cut-off frequency can be obtained up to THz-level for highly doped nanoscale Si tunnel junctions.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":"30 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling and RF analysis of silicon inter-band tunnel diode with THz cut-off frequency\",\"authors\":\"Kyung Rok Kim, I. Kang, R. Dutton\",\"doi\":\"10.1109/SNW.2010.5562553\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrated RF analysis framework based on tunnel velocity model for Si IBT diodes with ultra-thin tunnel barriers. Microwave and sub-millimeter wave properties of the non-linear NDR characteristics have been investigated in a numerical way with various structural design. The intrinsic cut-off frequency can be obtained up to THz-level for highly doped nanoscale Si tunnel junctions.\",\"PeriodicalId\":6433,\"journal\":{\"name\":\"2010 Silicon Nanoelectronics Workshop\",\"volume\":\"30 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Silicon Nanoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2010.5562553\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562553","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling and RF analysis of silicon inter-band tunnel diode with THz cut-off frequency
We demonstrated RF analysis framework based on tunnel velocity model for Si IBT diodes with ultra-thin tunnel barriers. Microwave and sub-millimeter wave properties of the non-linear NDR characteristics have been investigated in a numerical way with various structural design. The intrinsic cut-off frequency can be obtained up to THz-level for highly doped nanoscale Si tunnel junctions.
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