The effect of dip-coating speed on Graphene decorated ZnO films for memristor application

ZnO-Graphene material has been proven to show the effect of memristive behaviour. Consequently, a good memristive performance in devices of such materials has the potential in non-volatile memory applications. However, little is known about the significance of nanostructure in making the devices more conductive, thereby improving their performance. Here, we show the electrical, optical and morphological properties of ZnO decorated Graphene film for memristive device by using dip-coating method. Nanoflake structure was observed in samples that had been immersed 5 times for 30 seconds and annealed each time at 250°C for 10 minutes. These samples have higher current than that of samples without the nanostructure. The overall results demonstrate that the nanostructure ZnO and Graphene have greatly improved the current by 16 × 106 order of magnitude, thereby giving rise to improved memristive behaviour with resistance ratio of 1.18.