漏极深度对闪存电池寄生电流影响的模拟。

O. Zhevnyak, V. Borzdov, A. Borzdov
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引用次数: 0

摘要

本文采用蒙特卡罗模拟方法,计算了短沟道mos晶体管闪存单元中漏极深度对寄生电流的影响。结果表明,漏极深度的增加导致寄生隧道电流值的减小。它的发生是由于晶体管沟道中的电子电流密度向衬底转移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SIMULATION OF DRAIN DEPTH EFFECT ON PARASITIC CURRENTS IN FLASH-MEMORY CELLS.
In present paper the drain depth effect on parasitic currents in Flash-memory cells based on short-channel MOS-transistors has been calculated by using Monte Carlo simulation of electron drift in such devices. It is shown that the increase of the drain depth leads to the decrease of the value of parasitic tunnel current. It takes place because for deep drain electron current density in the transistor channel is shifted into substrate.
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