半Heusler合金NiCrSi的电子和磁性能

Bishartha Manandhar, P. Dahal, S. Nepal, Anisha Baral
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引用次数: 0

摘要

利用量子浓缩包和平面波伪势方法,研究了半Heusler合金NiCrSi的电、磁特性。此计算使用Ultrasoft伪势。通过计算发现,NiCrSi本质上是一种半金属铁磁体,带隙为0.81eV,有效矩为2µB。间隙的起源主要是由于体系中共价带隙和d-d带隙将成键态与反键态分开。我们的计算表明,Cr位点的自旋力矩比Ni位点大,这与Si的力矩相反。Ni- 3d和Cr-4d态的杂化可以在Ef上打开一个少数自旋隙,从而导致少数自旋带的半导体性质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electronic and magnetic properties of Half Heusler alloy NiCrSi
Utilizing the Quantum Espresso Package and the plane wave pseudopotential approach, the electrical and magnetic characteristics of the Half Heusler alloy NiCrSi have been investigated.Ultrasoft pseudo-potential is used for this calculation. Through our calculation, it was revealed that NiCrSi is a half-metallic ferromagnet in nature with a bandgap of 0.81eV and an effective moment of 2µB respectively. The origin of the gap is mainly due to the covalent band gap and d-d band gap in the system separating bonding states from anti-bonding states. Our calculation predicts a larger spin moment at Cr site than at Ni site which is antiparallel to the moment of Si. The hybridization of Ni- 3d and Cr-4d states can open a minority spin gap at Ef resulting in the semi-conducting nature of the minority spin band.
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