基于自适应重要性采样方法的记忆电路快速鲁棒失效分析

Xiao Shi, Jun Yang, Fengyuan Liu, Lei He
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引用次数: 20

摘要

性能故障已成为存储器电路鲁棒性和可靠性日益受到关注的问题。当破坏样本分布在多个不相交的破坏区域时,如何准确估计极小的破坏概率是一个挑战。本文提出了一种自适应重要抽样(AlS)方法。AIS有多次迭代的采样区域调整,而现有的方法预先确定一个静态的采样分布。通过迭代搜索故障区域,AIS可以提高效率和准确性。我们的实验证实了这一点。对于具有单个故障区域的SRAM单元,与最近的几种方法相比,AIS使用的样品减少了5 - 10倍,并且达到了更好的精度。对于具有多个故障区域的感测放大电路,AIS在不影响精度的情况下比MC快4369X,而在我们的实验中,其他方法无法覆盖所有故障区域
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Fast and Robust Failure Analysis of Memory Circuits Using Adaptive Importance Sampling Method
Performance failure has become a growing concern for the robustness and reliability of memory circuits. It is challenging to accurately estimate the extremely small failure probability when failed samples are distributed in multiple disjoint failure regions. In this paper, we develop an adaptive importance sampling (AlS) method. AIS has several iterations of sampling region adjusbnents, while existing methods pre-decide a static sampling distribution. By iteratively searching for failure regions, AIS may lead to better efficiency and accuracy. This is validated by our experiments. For SRAM cell with single failure region, AIS uses 5–10X fewer samples and reaches better accuracy when compared to several recent methods. For sense amplifier circuit with multiple failure regions, AIS is 4369X faster than MC without compromising accuracy, while other methods fail to cover all failure regions in our experiment
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