锡掺杂对氧化硅基RRAM性能的影响

Electrochemical and Solid State Letters Pub Date : 2012-01-01 DOI:10.1149/2.013203ESL

Kuan‐Chang Chang, T. Tsai, T. Chang, Yong-En Syu, Siang-Lan Chuang, Chenghua Li, D. Gan, S. Sze

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引用次数: 49

摘要

2011，第15卷，第3期，H65-H68页。Electrochem。固态。张广昌，蔡崇明，张廷昌，苏永恩，兰祥。基于氧化硅的RRAM与锡掺杂服务的影响电子邮件提醒点击本文右上角的方框中的这里或在新文章引用本文时接收免费电子邮件提醒

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The Effect of Silicon Oxide Based RRAM with Tin Doping

2011, Volume 15, Issue 3, Pages H65-H68. Electrochem. Solid-State Lett. Chuang, Cheng-Hua Li, Der-Shin Gan and Simon M. Sze Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Yong-En Syu, Siang-Lan The Effect of Silicon Oxide Based RRAM with Tin Doping service Email alerting click here in the box at the top right corner of the article or Receive free email alerts when new articles cite this article sign up

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来源期刊

Electrochemical and Solid State Letters 工程技术-材料科学：综合

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0.00%

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审稿时长

1.9 months