横向功率器件衬底效应的解析建模

J. Chen, Yufeng Guo, Man Li, Ling Du, Xinchun Ji, Changchun Zhang, Jiafei Yao
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引用次数: 0

摘要

建立了横向功率器件衬底效应的二维解析模型。通过求解二维泊松方程,建立了解析模型,并利用MEDICI软件对解析结果和数值模拟结果进行了验证。结果表明,优化后的衬底电压改变了表面电位和电场的分布,其效果相当于改变了漂移区的浓度。因此,击穿电压得到了提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analytical modeling for substrate effect of lateral power devices
A two-dimensional(2-D) analytical model for substrate effect of lateral power devices is developed. By solving the 2-D Poisson's equation, an analytical model is proposed and verified by the agreements between the analytical results and numerical simulation results using MEDICI. It suggests that the optimized substrate voltage modules the distributions of the surface potential and electrical field, whose effect is equivalent to changing the concentration of the drift region. As a result, the breakdown voltage is improved.
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