{"title":"利用后生长混合技术获得的先进波长可调谐量子点激光器和宽带量子点超发光二极管","authors":"Z. Zhang, Q. Jiang, R. Hogg","doi":"10.1109/SOPO.2009.5230107","DOIUrl":null,"url":null,"abstract":"A bandgap and intersublevel spacing tuned laser and a broadband quantum dot superluminescent diodes have been realized by using a modulation p-doped InGaAs/GaAs quantum dot structure, which utilises a post-growth annealing process. The intermixed laser exhibits comparable light-current characteristics, indicating little detrimental change to the quantum dot laser material, and show a ground-state bandgap blueshift of ~13nm and intersublevel energy spacing reduction of ~30nm comparing to the un-annealed device. The intermixed broadband superluminescent light emitting diodes exhibits a large and flat emission with spectral width up to 132nm at 2 mW.","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":"153 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advanced Wavelength Tunable Quantum Dot Lasers and Broadband Quantum Dot Superluminescent Diodes Obtained by Post-Growth Intermixing\",\"authors\":\"Z. Zhang, Q. Jiang, R. Hogg\",\"doi\":\"10.1109/SOPO.2009.5230107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A bandgap and intersublevel spacing tuned laser and a broadband quantum dot superluminescent diodes have been realized by using a modulation p-doped InGaAs/GaAs quantum dot structure, which utilises a post-growth annealing process. The intermixed laser exhibits comparable light-current characteristics, indicating little detrimental change to the quantum dot laser material, and show a ground-state bandgap blueshift of ~13nm and intersublevel energy spacing reduction of ~30nm comparing to the un-annealed device. The intermixed broadband superluminescent light emitting diodes exhibits a large and flat emission with spectral width up to 132nm at 2 mW.\",\"PeriodicalId\":6416,\"journal\":{\"name\":\"2009 Symposium on Photonics and Optoelectronics\",\"volume\":\"153 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2009.5230107\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2009.5230107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced Wavelength Tunable Quantum Dot Lasers and Broadband Quantum Dot Superluminescent Diodes Obtained by Post-Growth Intermixing
A bandgap and intersublevel spacing tuned laser and a broadband quantum dot superluminescent diodes have been realized by using a modulation p-doped InGaAs/GaAs quantum dot structure, which utilises a post-growth annealing process. The intermixed laser exhibits comparable light-current characteristics, indicating little detrimental change to the quantum dot laser material, and show a ground-state bandgap blueshift of ~13nm and intersublevel energy spacing reduction of ~30nm comparing to the un-annealed device. The intermixed broadband superluminescent light emitting diodes exhibits a large and flat emission with spectral width up to 132nm at 2 mW.
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