碲化汞与高效薄膜碲化镉太阳能电池的欧姆接触

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105944

T. Chu, S. Chu, K. Han, M. K. Mantravadi

{"title":"碲化汞与高效薄膜碲化镉太阳能电池的欧姆接触","authors":"T. Chu, S. Chu, K. Han, M. K. Mantravadi","doi":"10.1109/PVSC.1988.105944","DOIUrl":null,"url":null,"abstract":"The use of contact materials with a higher work function than p-CdTe is investigated using p-HgTe as the contact material. The deposition of p-HgTe on p-CdTe is carried out by the direct combination of the elemental vapors in a gas-flow system and by the close-spaced sublimation (CSS) technique. The process parameters in the direct combination technique are more readily controlled than those in the CSS technique. The p-HgTe/p-CdTe contact resistance was found to be very similar to the Au/p-CdTe contact resistance.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"133 1","pages":"1422-1425 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Mercury telluride as an ohmic contact to efficient thin film cadmium telluride solar cells\",\"authors\":\"T. Chu, S. Chu, K. Han, M. K. Mantravadi\",\"doi\":\"10.1109/PVSC.1988.105944\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The use of contact materials with a higher work function than p-CdTe is investigated using p-HgTe as the contact material. The deposition of p-HgTe on p-CdTe is carried out by the direct combination of the elemental vapors in a gas-flow system and by the close-spaced sublimation (CSS) technique. The process parameters in the direct combination technique are more readily controlled than those in the CSS technique. The p-HgTe/p-CdTe contact resistance was found to be very similar to the Au/p-CdTe contact resistance.<<ETX>>\",\"PeriodicalId\":10562,\"journal\":{\"name\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"volume\":\"133 1\",\"pages\":\"1422-1425 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1988.105944\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

以p-HgTe为接触材料，研究了功函数比p-CdTe高的接触材料的使用。p-HgTe在p-CdTe上的沉积是通过气体流动系统中元素蒸气的直接结合和近间隔升华(CSS)技术进行的。直接组合技术的工艺参数比CSS技术的工艺参数更容易控制。发现p-HgTe/p-CdTe接触电阻与Au/p-CdTe接触电阻非常相似

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Mercury telluride as an ohmic contact to efficient thin film cadmium telluride solar cells

The use of contact materials with a higher work function than p-CdTe is investigated using p-HgTe as the contact material. The deposition of p-HgTe on p-CdTe is carried out by the direct combination of the elemental vapors in a gas-flow system and by the close-spaced sublimation (CSS) technique. The process parameters in the direct combination technique are more readily controlled than those in the CSS technique. The p-HgTe/p-CdTe contact resistance was found to be very similar to the Au/p-CdTe contact resistance.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference

CiteScore

1.40

自引率

0.00%

发文量