Jung-Hao Chang, Cheng-Syun Li, Cheng-Chi Chen, Sheng-Shian Li
{"title":"CMOS-MEMS热压阻谐振器在传感器环境压力下的性能评估","authors":"Jung-Hao Chang, Cheng-Syun Li, Cheng-Chi Chen, Sheng-Shian Li","doi":"10.1109/FCS.2015.7138823","DOIUrl":null,"url":null,"abstract":"In this work, we report a thermally driven and piezoresistively sensed (a.k.a. thermal-piezoresistive) CMOS-MEMS resonator with high quality factor in ambient pressure and with decent power handling capability. The combination of (i) no need of tiny capacitive transducer's gap spacing thanks to thermal-piezoresistive transduction, (ii) the use of high-Q SiO2/polysilicon structural materials from CMOS back-end-of-line (BEOL), and (iii) the bulk-mode resonator design leads to resonator Q more than 2,000 in ambient pressure and 10,000 in vacuum. Key to attaining sheer Q in ambient pressure relies on significant attenuation of the air damping effect through thermal-piezoresistive transduction as compared to conventional capacitive resonators which necessitate tiny transducer's gap for reasonable electromechanical coupling. With such high Q and inherent circuit integration capability, the proposed CMOS-MEMS thermal-piezoresistive resonators can potentially be implemented as high sensitivity mass/gas sensors based on resonant transducers. The resonators with center frequency around 5.1 MHz were fabricated using a standard 0.35 μm 2-poly-4-metal (2P4M) CMOS process, thus featuring low cost, batch production, fast turnaround time, easy prototyping, and MEMS/IC integration.","PeriodicalId":57667,"journal":{"name":"时间频率公报","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Performance evaluation of CMOS-MEMS thermal-piezoresistive resonators in ambient pressure for sensor applications\",\"authors\":\"Jung-Hao Chang, Cheng-Syun Li, Cheng-Chi Chen, Sheng-Shian Li\",\"doi\":\"10.1109/FCS.2015.7138823\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we report a thermally driven and piezoresistively sensed (a.k.a. thermal-piezoresistive) CMOS-MEMS resonator with high quality factor in ambient pressure and with decent power handling capability. The combination of (i) no need of tiny capacitive transducer's gap spacing thanks to thermal-piezoresistive transduction, (ii) the use of high-Q SiO2/polysilicon structural materials from CMOS back-end-of-line (BEOL), and (iii) the bulk-mode resonator design leads to resonator Q more than 2,000 in ambient pressure and 10,000 in vacuum. Key to attaining sheer Q in ambient pressure relies on significant attenuation of the air damping effect through thermal-piezoresistive transduction as compared to conventional capacitive resonators which necessitate tiny transducer's gap for reasonable electromechanical coupling. With such high Q and inherent circuit integration capability, the proposed CMOS-MEMS thermal-piezoresistive resonators can potentially be implemented as high sensitivity mass/gas sensors based on resonant transducers. The resonators with center frequency around 5.1 MHz were fabricated using a standard 0.35 μm 2-poly-4-metal (2P4M) CMOS process, thus featuring low cost, batch production, fast turnaround time, easy prototyping, and MEMS/IC integration.\",\"PeriodicalId\":57667,\"journal\":{\"name\":\"时间频率公报\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"时间频率公报\",\"FirstCategoryId\":\"1089\",\"ListUrlMain\":\"https://doi.org/10.1109/FCS.2015.7138823\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"时间频率公报","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.1109/FCS.2015.7138823","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance evaluation of CMOS-MEMS thermal-piezoresistive resonators in ambient pressure for sensor applications
In this work, we report a thermally driven and piezoresistively sensed (a.k.a. thermal-piezoresistive) CMOS-MEMS resonator with high quality factor in ambient pressure and with decent power handling capability. The combination of (i) no need of tiny capacitive transducer's gap spacing thanks to thermal-piezoresistive transduction, (ii) the use of high-Q SiO2/polysilicon structural materials from CMOS back-end-of-line (BEOL), and (iii) the bulk-mode resonator design leads to resonator Q more than 2,000 in ambient pressure and 10,000 in vacuum. Key to attaining sheer Q in ambient pressure relies on significant attenuation of the air damping effect through thermal-piezoresistive transduction as compared to conventional capacitive resonators which necessitate tiny transducer's gap for reasonable electromechanical coupling. With such high Q and inherent circuit integration capability, the proposed CMOS-MEMS thermal-piezoresistive resonators can potentially be implemented as high sensitivity mass/gas sensors based on resonant transducers. The resonators with center frequency around 5.1 MHz were fabricated using a standard 0.35 μm 2-poly-4-metal (2P4M) CMOS process, thus featuring low cost, batch production, fast turnaround time, easy prototyping, and MEMS/IC integration.