具有无损读出操作的单晶体管铁电RAM

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820955

Shiho Kim, Il-Suk Yang, Won-Jae Lee, I. You, B. Yu, K. Cho

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引用次数: 0

摘要

提出了一种非易失性单晶体管型FRAM。为了克服单晶体管型FRAM的选择问题，每个井与相邻的柱隔离，因此可以单独控制井的偏置，并且可以处于浮动状态。HSPICE模拟结果表明，所提出的单元阵列运行成功。未选电池的最差栅极干扰电压小于2 V，满足V/3规律。

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A single transistor ferroelectric RAM with nondestructive readout operations

A nonvolatile single transistor type FRAM is proposed. To overcome the selection problem of one-transistor-type FRAM, each well is isolated from adjacent columns, hence, the well bias can be controlled individually and can be floating state. The results of HSPICE simulations showed the successful operations of the proposed cell array. The worst gate disturb voltage of unselected cell is less than 2 V, which satisfies V/3 rule.

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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