{"title":"AIIIBV半导体中的线缺陷","authors":"H. Höche, H. Leipner, G. Stadermann","doi":"10.1002/PSSA.2210980221","DOIUrl":null,"url":null,"abstract":"Line defects are found by means of TEM in epitaxial and bulk material of various AIIIBV semiconductors. These [110] oriented defects are localized near the surface and interface, respectively. The line defects are of vacancy type and reveal characteristic etch figures. A possible explanation is seen in the development of oriented point defect clusters. \n \n \n \nAn epitaktischen und Volumenmaterial verschiedener AIIIBV-Halbleiter werden mittels TEM in Oberflachen- bzw. Grenzflachennahe neuartige Liniendefekte gefunden, die in [110] orientiert sind. Diese Defekte sind vom Leerstellentyp und bilden beim Anatzen charakteristische Atzfiguren. Eine mogliche Erklarung wird in der Bildung orientierter Cluster von Punktdefekten gesehen.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"5 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Line Defects in AIIIBV Semiconductors\",\"authors\":\"H. Höche, H. Leipner, G. Stadermann\",\"doi\":\"10.1002/PSSA.2210980221\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Line defects are found by means of TEM in epitaxial and bulk material of various AIIIBV semiconductors. These [110] oriented defects are localized near the surface and interface, respectively. The line defects are of vacancy type and reveal characteristic etch figures. A possible explanation is seen in the development of oriented point defect clusters. \\n \\n \\n \\nAn epitaktischen und Volumenmaterial verschiedener AIIIBV-Halbleiter werden mittels TEM in Oberflachen- bzw. Grenzflachennahe neuartige Liniendefekte gefunden, die in [110] orientiert sind. Diese Defekte sind vom Leerstellentyp und bilden beim Anatzen charakteristische Atzfiguren. Eine mogliche Erklarung wird in der Bildung orientierter Cluster von Punktdefekten gesehen.\",\"PeriodicalId\":90917,\"journal\":{\"name\":\"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...\",\"volume\":\"5 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/PSSA.2210980221\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSA.2210980221","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Line defects are found by means of TEM in epitaxial and bulk material of various AIIIBV semiconductors. These [110] oriented defects are localized near the surface and interface, respectively. The line defects are of vacancy type and reveal characteristic etch figures. A possible explanation is seen in the development of oriented point defect clusters.
An epitaktischen und Volumenmaterial verschiedener AIIIBV-Halbleiter werden mittels TEM in Oberflachen- bzw. Grenzflachennahe neuartige Liniendefekte gefunden, die in [110] orientiert sind. Diese Defekte sind vom Leerstellentyp und bilden beim Anatzen charakteristische Atzfiguren. Eine mogliche Erklarung wird in der Bildung orientierter Cluster von Punktdefekten gesehen.
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