[海报环节:2012 IEEE微电子与电子器件研讨会]

IEEE Workshop on Microelectronics and Electron Devices : [proceedings]. IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2012-04-20 DOI:10.1109/WMED.2012.6202610

S. Qin, T. McDaniel, L. Liu, R. Burke, Y. J. Hu, A. Mcteer, B. Pun, M. Mitkova, P. Miranda, R. Zoller, M. Seibert, M. R. Latif, M. Ailavajhala, Ping-Han Chen, D. Butt, D. Olesky, Y. G. Velo, H. Barnaby, P. Salvador, M. Ostyn, S. Parke, Tyler Rowe, M. Pearlman, J. Browning

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引用次数: 1

摘要

本海报讨论以下内容:使用埋藏接触植入物改善PMOS器件性能;微流体器件中的深沟槽模式与升力阻基于硫系玻璃的纳米离子导电电桥忆阻器:电性能表征与建模。

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[Poster Session: 2012 IEEE Workshop on Microelectronics and Electron Devices (WMED)]

This Poster Session discusses the following: PMOS Device Performance Improvement using Buried Contact Implants; Deep Trench Patterning and Lift-off Resist in Micro-fluidic Devices; and Nano-ionic Conductive Bridge Memristors based on Chalcogenide Glasses: Electrical Performance Characterization and Modeling.

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来源期刊

IEEE Workshop on Microelectronics and Electron Devices : [proceedings]. IEEE Workshop on Microelectronics and Electron Devices

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