载流子密度对光激发GaAs中太赫兹诱导非线性的影响

G. Sharma, H. Hafez, I. Al-Naib, R. Morandotti, T. Ozaki
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引用次数: 0

摘要

研究了电子载流子密度对强太赫兹场照射下光激发砷化镓非线性响应的影响。我们使用光泵浦/太赫兹探针技术,并用基于谷间散射的模型解释我们的实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of the carrier density on the THz-induced nonlinearity in photoexcited GaAs
We investigate the effects of electron carrier density on the nonlinear response of photoexcited GaAs, illuminated by intense terahertz fields. We use the optical-pump/THz-probe technique, and explain our experimental results with an intervalley-scattering-based model.
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