用于室温二氧化氮气体传感的氧化钨薄膜

MATEC Web of Conferences Pub Date : 2023-01-01 DOI:10.1051/matecconf/202337401003

Thokozani Mpanza, Ceboliyazakha L. Ndlangamandla, B. Ngom, S. Nkosi, Thulani P. Jili, C. Thethwayo, Puleng N. Biyela, Ntokozo G. Cebekhulu, Prince S. Mkwae, Sunday A. Ogundipe

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引用次数: 1

摘要

在不同的沉积温度(300°C, 400°C和500°C)下，利用反应直流磁控溅射技术成功地沉积了用于气敏的氧化钨(WO3)薄膜。利用x射线衍射(XRD)、扫描电子显微镜(SEM)和卢瑟福后向散射光谱(RBS)技术对其结构、形貌、厚度和成分进行了研究。为了研究沉积温度对氧化铝基板上沉积薄膜气敏性能的影响，采用Kenosistec气敏装置进行了沉积温度对沉积薄膜气敏性能的影响。500℃下沉积的WO3薄膜在室温下对二氧化氮(NO2)的传感响应比300℃和400℃下制备的薄膜要高。然而，由于沉积的WO3薄膜对氢(H2)和氨(NH3)等还原性气体的敏感性较低，这表明WO3相关传感器具有良好的选择性。

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Tungsten oxide thin film for room temperature nitrogen dioxide gas sensing

Tungsten oxide (WO3) thin films for gas sensing have been successfully deposited using reactive direct current (DC) magnetron sputtering at different deposition temperatures (300 °C, 400 °C and 500 °C). The structural, morphological properties, thickness and composition have been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Rutherford backscattering spectrometry (RBS) techniques. To investigate the effect of deposition temperature on the gas sensing properties of deposited thin films on alumina substrates, was conducted using the Kenosistec gas sensing unit. WO3 thin film deposited at 500 °C exhibited a higher response when sensing Nitrogen dioxide (NO2) at room temperature as compared to the thin films prepared at 300 °C and 400 °C, respectively. However, as deposited WO3 thin films exhibited low sensitivity when sensing reducing gases such as hydrogen (H2) and ammonia (NH3), which was an indication of good selectivity properties of WO3 related sensors.

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来源期刊

MATEC Web of Conferences

自引率

0.00%

发文量

342

审稿时长

6 weeks

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