SiGe隧道场效应管器件及电路性能评价与改进

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI:10.1109/ESCINANO.2010.5701031

R. Mishr, Bahniman Ghosh, S. Banerjee

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引用次数: 1

摘要

近年来对隧道场效应管的研究证明，隧道场效应管比传统的mosfet具有更低的亚阈值摆幅、更低的功耗和不受量子力学效应限制的缩放[1]。通过在源侧使用SiGe层，已提出改善tfet的导通电流[2]。本文研究了不同Ge摩尔分数对各种基准电路(逆变器、恒负载逆变器、8位纹波进位加法器(RCA)、5级环形振荡器、10级NAND和NOR链)性能的影响。本文还提出了一种通过对锗组成进行分级来测定高锗组成tfet离子/ off比的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Device and circuit performance evaluation and improvement of SiGe Tunnel FETs

Investigation on Tunnel FETs in recent years have proved them to be better than conventional MOSFETs lower subthreshold swing, lower power consumption and their scaling is not limited by quantum mechanical effects [1]. Improvement in the on-current of TFETs has been proposed by the use of SiGe layer on the source side [2]. This paper investigates the effect of different Ge mole fractions on the performance of various benchmark circuits (inverter, inverter with constant load, 8 bit ripple carry adder (RCA), 5 stage ring oscillator, 10 stage NAND and NOR chain). A method of the Ion/Ioff ratio of TFETs with high Ge composition, by grading the Ge composition has also been suggested.

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2010 International Conference on Enabling Science and Nanotechnology (ESciNano)

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