电子束辐照石墨烯的拉曼光谱研究

2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI:10.1109/SMICND.2014.6966417

C. Florin, A. Dinescu, M. Purica

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引用次数: 2

摘要

利用微拉曼光谱研究了加速电压分别为3 kV和5 kV，辐照剂量分别为200、400和800 μC/cm2时石墨烯的结构变化。从红色激光(633 nm)采集的拉曼光谱中提取的每个加速电压的振幅比- ID/IG和I2D/IG与暴露剂量的比值表明，在低暴露剂量下单层石墨烯的降解增加。

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Raman spectroscopy investigation of electron beam irradiated graphene

Structural modification of graphene after direct electron beam irradiation (acceleration voltages of 3 kV and 5 kV and exposure doses 200, 400, 800 μC/cm²) has been investigated by using micro-Raman spectroscopy. The amplitudes ratio - I_D/I_G and I_2D/I_G versus exposure doses for each acceleration voltage extracted from Raman spectra acquisitions with red laser (633 nm) are evidencing the increasing degradation of single layer graphene at low exposure doses.

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2014 International Semiconductor Conference (CAS)

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