一种集成电容耦合变压器及其在射频集成电路中的应用

Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044) Pub Date : 2000-05-21 DOI:10.1109/CICC.2000.852682

L. Wong, C. Snyder, T. Manku, S. Kovacic

{"title":"一种集成电容耦合变压器及其在射频集成电路中的应用","authors":"L. Wong, C. Snyder, T. Manku, S. Kovacic","doi":"10.1109/CICC.2000.852682","DOIUrl":null,"url":null,"abstract":"This paper describes a low voltage topology that uses a passive element that is described as a \"capacitively coupled transformer\" (CCT). This structure can be easily implemented using an IC technology that supports both on chip MIM capacitors and high Q-inductors. The structure is used to design a low noise amplifier at 1.9 GHz. The LNA consumes 4 mA of current has a input IP3 of -4.5 dBm, a noise figure of 2.3 dB for a source resistance of 50 /spl Omega/, a minimum noise figure of 1.9 dB, and a gain of 10.1 dB. The topology maintains a high linearity without sacrificing noise figure and gain for a supply voltage of 1 V.","PeriodicalId":20702,"journal":{"name":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","volume":"1 1","pages":"349-352"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"An integrated capacitively coupled transformer and its application for RF IC's\",\"authors\":\"L. Wong, C. Snyder, T. Manku, S. Kovacic\",\"doi\":\"10.1109/CICC.2000.852682\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a low voltage topology that uses a passive element that is described as a \\\"capacitively coupled transformer\\\" (CCT). This structure can be easily implemented using an IC technology that supports both on chip MIM capacitors and high Q-inductors. The structure is used to design a low noise amplifier at 1.9 GHz. The LNA consumes 4 mA of current has a input IP3 of -4.5 dBm, a noise figure of 2.3 dB for a source resistance of 50 /spl Omega/, a minimum noise figure of 1.9 dB, and a gain of 10.1 dB. The topology maintains a high linearity without sacrificing noise figure and gain for a supply voltage of 1 V.\",\"PeriodicalId\":20702,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"volume\":\"1 1\",\"pages\":\"349-352\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2000.852682\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2000.852682","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

本文描述了一种低压拓扑结构，它使用一种被称为“电容耦合变压器”(CCT)的无源元件。这种结构可以使用支持片上MIM电容器和高q电感器的IC技术轻松实现。利用该结构设计了一个1.9 GHz的低噪声放大器。LNA消耗4ma电流，输入IP3为-4.5 dBm，源电阻为50 /spl ω /时噪声系数为2.3 dB，最小噪声系数为1.9 dB，增益为10.1 dB。该拓扑结构在电源电压为1 V时保持高线性度，而不牺牲噪声系数和增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An integrated capacitively coupled transformer and its application for RF IC's

This paper describes a low voltage topology that uses a passive element that is described as a "capacitively coupled transformer" (CCT). This structure can be easily implemented using an IC technology that supports both on chip MIM capacitors and high Q-inductors. The structure is used to design a low noise amplifier at 1.9 GHz. The LNA consumes 4 mA of current has a input IP3 of -4.5 dBm, a noise figure of 2.3 dB for a source resistance of 50 /spl Omega/, a minimum noise figure of 1.9 dB, and a gain of 10.1 dB. The topology maintains a high linearity without sacrificing noise figure and gain for a supply voltage of 1 V.

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Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)

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