Mao Ni, Lan Chen, Xiaoran Hao, Chenji Liu, Yiheng Zhang, Ying Li
{"title":"物联网终端非易失缓存的弹性自适应预取","authors":"Mao Ni, Lan Chen, Xiaoran Hao, Chenji Liu, Yiheng Zhang, Ying Li","doi":"10.1587/elex.19.20220225","DOIUrl":null,"url":null,"abstract":"STT-RAM with high storage density, near-zero leakage energy and CMOS compatibility is regarded as a replacement for SRAM to build large-sized cache, which can effectively alleviate the “memory wall” and improve computing power of IoT terminals. The state-of-the-art Near-Side Prefetch Throttling (NST) oriented to SRAM cache can effectively hide the access latency of off-chip memory. However, it also shows some inadaptability to the long write latency and high write energy of STT-RAM cache. The NST algorithm can not timely alleviate the cache congestion caused by STT-RAM long write latency, moreover, if the STT-RAM cache is congested, adjusting the prefetch distance is invalid to improve the prefetch timeliness. In response to the above problems, this paper novelly proposes a periodic and real-time complementary prefetch algorithm called ENCP for STT-RAM cache. Experiments show that, compared to the best- performed STREAM prefetcher, ENCP can reduce the write energy of STTRAM cache by 8.3% on average and 23% the most and improve the CPU IPC performance by 0.46% on average and 3.1% the most. And the ENCP has better performance and lower dynamic energy compared with NST with almost the same hardware overhead.","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"35 1","pages":"20220225"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Elastic adaptive prefetching for non-volatile cache in IoT terminals\",\"authors\":\"Mao Ni, Lan Chen, Xiaoran Hao, Chenji Liu, Yiheng Zhang, Ying Li\",\"doi\":\"10.1587/elex.19.20220225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"STT-RAM with high storage density, near-zero leakage energy and CMOS compatibility is regarded as a replacement for SRAM to build large-sized cache, which can effectively alleviate the “memory wall” and improve computing power of IoT terminals. The state-of-the-art Near-Side Prefetch Throttling (NST) oriented to SRAM cache can effectively hide the access latency of off-chip memory. However, it also shows some inadaptability to the long write latency and high write energy of STT-RAM cache. The NST algorithm can not timely alleviate the cache congestion caused by STT-RAM long write latency, moreover, if the STT-RAM cache is congested, adjusting the prefetch distance is invalid to improve the prefetch timeliness. In response to the above problems, this paper novelly proposes a periodic and real-time complementary prefetch algorithm called ENCP for STT-RAM cache. Experiments show that, compared to the best- performed STREAM prefetcher, ENCP can reduce the write energy of STTRAM cache by 8.3% on average and 23% the most and improve the CPU IPC performance by 0.46% on average and 3.1% the most. And the ENCP has better performance and lower dynamic energy compared with NST with almost the same hardware overhead.\",\"PeriodicalId\":13437,\"journal\":{\"name\":\"IEICE Electron. Express\",\"volume\":\"35 1\",\"pages\":\"20220225\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEICE Electron. Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1587/elex.19.20220225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEICE Electron. Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/elex.19.20220225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Elastic adaptive prefetching for non-volatile cache in IoT terminals
STT-RAM with high storage density, near-zero leakage energy and CMOS compatibility is regarded as a replacement for SRAM to build large-sized cache, which can effectively alleviate the “memory wall” and improve computing power of IoT terminals. The state-of-the-art Near-Side Prefetch Throttling (NST) oriented to SRAM cache can effectively hide the access latency of off-chip memory. However, it also shows some inadaptability to the long write latency and high write energy of STT-RAM cache. The NST algorithm can not timely alleviate the cache congestion caused by STT-RAM long write latency, moreover, if the STT-RAM cache is congested, adjusting the prefetch distance is invalid to improve the prefetch timeliness. In response to the above problems, this paper novelly proposes a periodic and real-time complementary prefetch algorithm called ENCP for STT-RAM cache. Experiments show that, compared to the best- performed STREAM prefetcher, ENCP can reduce the write energy of STTRAM cache by 8.3% on average and 23% the most and improve the CPU IPC performance by 0.46% on average and 3.1% the most. And the ENCP has better performance and lower dynamic energy compared with NST with almost the same hardware overhead.