LB技术制备的含有MIS结的聚酰亚胺Langmuir-Blodgett薄膜的电输运特性

[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials Pub Date : 1991-07-08 DOI:10.1109/ICPADM.1991.172047

M. Iwamoto, Shun-ichi Shidoh

{"title":"LB技术制备的含有MIS结的聚酰亚胺Langmuir-Blodgett薄膜的电输运特性","authors":"M. Iwamoto, Shun-ichi Shidoh","doi":"10.1109/ICPADM.1991.172047","DOIUrl":null,"url":null,"abstract":"The authors fabricated metal-insulator-semiconductor (MIS) junctions having a structure of Au/polymide (PI)/squarylium-dye-arachidic(SQ-C20) mixed system by the Langmuir-Blodgett (LB) technique, and then examined the electrical transport properties of the junctions. It was found that a PI LB film becomes a good electrical insulator even when the number of deposited layers is five. From capacitance-voltage (C-V) measurement, it was found that a SQ-C20 multilayered film is depleted at the interface between the PI layer and the SQ-C20 layer even when the biasing voltage was zero millivolts, because positive excess charges are displaced from the gate-Au electrode to the PI layer as deposited. The PI layer incorporated in the junctions makes a significant contribution to the electrical conduction, and asymmetric current-voltage (I-V) characteristics were obtained for the junctions.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"295 1","pages":"189-192 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical transport properties of polyimide Langmuir-Blodgett films incorporating MIS junctions fabricated by the LB technique\",\"authors\":\"M. Iwamoto, Shun-ichi Shidoh\",\"doi\":\"10.1109/ICPADM.1991.172047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors fabricated metal-insulator-semiconductor (MIS) junctions having a structure of Au/polymide (PI)/squarylium-dye-arachidic(SQ-C20) mixed system by the Langmuir-Blodgett (LB) technique, and then examined the electrical transport properties of the junctions. It was found that a PI LB film becomes a good electrical insulator even when the number of deposited layers is five. From capacitance-voltage (C-V) measurement, it was found that a SQ-C20 multilayered film is depleted at the interface between the PI layer and the SQ-C20 layer even when the biasing voltage was zero millivolts, because positive excess charges are displaced from the gate-Au electrode to the PI layer as deposited. The PI layer incorporated in the junctions makes a significant contribution to the electrical conduction, and asymmetric current-voltage (I-V) characteristics were obtained for the junctions.<<ETX>>\",\"PeriodicalId\":6450,\"journal\":{\"name\":\"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials\",\"volume\":\"295 1\",\"pages\":\"189-192 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICPADM.1991.172047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICPADM.1991.172047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用Langmuir-Blodgett (LB)技术制备了具有Au/ polyamide (PI)/ squaryum -dye-arachidic(SQ-C20)混合体系结构的金属-绝缘体-半导体(MIS)结，并对其电输运特性进行了研究。结果表明，当沉积层数为5层时，PI LB薄膜仍能成为良好的电绝缘体。从电容电压(C-V)测量中发现，即使偏置电压为零毫伏，也会在PI层和SQ-C20层之间的界面处耗尽SQ-C20多层膜，这是由于过量的正电荷从栅极- au电极转移到沉积的PI层上。结合在结中的PI层对导电有重要贡献，并且结具有非对称的电流-电压(I-V)特性。

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Electrical transport properties of polyimide Langmuir-Blodgett films incorporating MIS junctions fabricated by the LB technique

The authors fabricated metal-insulator-semiconductor (MIS) junctions having a structure of Au/polymide (PI)/squarylium-dye-arachidic(SQ-C20) mixed system by the Langmuir-Blodgett (LB) technique, and then examined the electrical transport properties of the junctions. It was found that a PI LB film becomes a good electrical insulator even when the number of deposited layers is five. From capacitance-voltage (C-V) measurement, it was found that a SQ-C20 multilayered film is depleted at the interface between the PI layer and the SQ-C20 layer even when the biasing voltage was zero millivolts, because positive excess charges are displaced from the gate-Au electrode to the PI layer as deposited. The PI layer incorporated in the junctions makes a significant contribution to the electrical conduction, and asymmetric current-voltage (I-V) characteristics were obtained for the junctions.<>

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来源期刊

[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials

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