用于表面修饰、注入和分析的纳米级多电荷聚焦离子束平台。

M. Lalande, P. Salou, A. Houel, T. Been, Thierry Birou, C. Bourin, A. Cassimi, A. Keizer, Jean-Baptiste Mellier, J. Ramillon, A. Sineau, A. Delobbe, S. Guillous
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引用次数: 0

摘要

PELIICAEN(纳米尺度离子注入控制和分析研究平台)装置是一个独特的设备,无论是其所有的超高真空原位设备(聚焦离子束柱,二次电子显微镜,原子力显微镜和扫描隧道显微镜),还是其在材料上的纳米结构性能。该装置最近配备了自己的电子回旋共振离子源,一个新的使用气动振动绝缘体的位置控制平台和一个快速脉冲装置。然后,它的性能得到了极大的改善,提供了大量的离子选择,可调的离子注入深度可达几百纳米,图像分辨率可低至25纳米,样品上的离子束尺寸可低至100纳米。拥有所有这些设备,PELIICAEN装置在进行离子注入和表面改性的研究和分析方面具有国际前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nanoscale multiply charged focused ion beam platform for surface modification, implantation, and analysis.
The PELIICAEN (Platform for the Study of Ion Implantation Controlled and Analyzed at the Nanometric Scale) setup is a unique device, both for all of its in situ ultra-high vacuum equipment (focused ion beam column, secondary electron microscope, atomic force microscope, and scanning tunneling microscope) and for its nanostructuration performances on materials. The setup has been recently equipped with its own electron cyclotron resonance ion sources, a new position-controlled platform using pneumatic vibration insulators, and a fast pulsing device. Its performances were then deeply improved, providing access to a large choice of ions, an adjustable ion implantation depth up to a few hundred nanometers, an image resolution down to 25 nm, and an ion beam size on the sample down to 100 nm. With all this equipment, the PELIICAEN setup is in the international foreground to perform and analyze ion implantation and surface modification.
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