SiGe单层气体吸附传感器的第一性原理研究

Xiang Sun, K. Liang, Fang Dong, Zhen Wang, Sheng Liu
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引用次数: 0

摘要

利用密度泛函理论中的第一性原理计算,研究了气体(CO2、CO、H2O、NH3) - SiGe单层体系的吸附特性,发现了最敏感的气体和吸附位点(CO2的Si位点、CO的Center位点、NH3的Ge位点和H2O的Ge位点)。吸附能、带隙和电荷转移都被考虑在内。研究结果表明,SiGe对NH3最敏感,对H2O也有较好的吸附性能。NH3吸附剂具有较大的吸附能,适合用作气体装置的传感材料。通过考虑吸附距离、吸附能和电荷密度差(CDD)图确定了物理吸附模型,有利于气体传感器的应用。我们的理论结果表明,单层SiGe是气体传感应用的一个有前途的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First-principle study of gas adsorption on SiGe monolayer as sensor applications
Using first-principles calculation within density functional theory, the adsorption properties of gas (CO2, CO, H2O, NH3) – SiGe monolayer systems are chosen to investigate and the most sensitive gas and adsorption site (Si site for CO2, Center site for CO, Ge site for NH3, and Ge site for H2O ) are discovered. The adsorption energy, band gap, and charge transfer are all considered. Through research, the results indicate that SiGe is most sensitive to NH3 while H2O also show an impressive adsorption property. NH3 adsorption possess large adsorption energy that is suitable to be used as sensing material in gas device. And the physical adsorption model is determined through considering adsorption distance, adsorption energy, and Charge density difference (CDD) plot, moreover, the physical adsorption is profited to the application of gas sensor. Our theoretical results indicates that monolayer SiGe is a promising candidate for gas sensing applications.
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