非金属掺杂的CdO单层诱导半金属铁磁性能研究

Lalrinthara Pachuau, Dibya Prakash, R. Tiwari, Lalhriatzuala
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引用次数: 0

摘要

掺杂是一种改变材料性质的有效方法。我们基于Perdew, Burke和Ernzerhof (PBE-sol)对固体修正的广义梯度近似(GGA)中的自旋极化密度函数理论,研究了非金属元素(B, C和N)掺杂的CdO单层的结构,电子和磁性能。在CdO单分子层中,用一个原子取代O位上的B、C和N,在价带间隙或附近产生自旋极化局域态,并分别表现出局域磁矩~ 1 μΒ、~ 2 μΒ和~ 1 μΒ。研究发现,这些掺杂体系的磁性态与掺杂剂的电负性与基体阴离子的电负性之差有关。我们的研究表明,非金属掺杂的CdO是一种很有前途的新型纳米材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of induced half-metallic ferromagnetic property in CdO monolayer with non-metallic doping
Doping is known to be an efficient way of altering the properties of materials. We have studied the structural, electronic and magnetic properties of non-metallic element (B, C and N)-doped CdO monolayer based on spin-polarized density function theory within the generalized gradient approximation (GGA) as revised for solids by Perdew, Burke and Ernzerhof (PBE-sol). Substituting B, C and N in O site with one atom in CdO monolayer induces spin polarized localized states in the gap or near the valence band and exhibit local magnetic moments ~ 1 μΒ, ~ 2 μΒ and ~ 1 μΒ respectively. It is found that the magnetic states in these doped systems are associated with the difference between the electronegativity of the dopant and the anion in the host. Our study shows that non-metal doped CdO is a promising candidate for novel nano-materials for future applications.
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