不同退火温度下CdSe薄膜形貌、结构和光学性能的热退火研究

S. Najim, A. M. Muhammed, A. Pogrebnjak
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引用次数: 0

摘要

采用化学浴沉积方法在玻璃基板上沉积CdSe薄膜,并在不同温度(373、5773、773、873 K)下进行退火,利用扫描电镜(SEM)研究了薄膜表面呈六边形结构,晶粒大小随退火温度的升高而增大。具有六方结构的CdSe薄膜和退火后的CdSe薄膜的x射线衍射(XRD)光谱具有分辨峰(002)。结晶性在873 K时得到改善。CdSe薄膜的带隙为2.2 eV,随退火温度的升高而减小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of Thermal Annealing on Morphology, Structure and Optical Properties Of CdSe Thin Films at Different Annealing Temperatures
CdSe thin films were deposited on the glass substrate by chemical bath deposition and annealed at various temperatures (373, 573, 773, and 873 K). Scanning electron microscopy (SEM) was used to study the surface of hexagonal structure and the grains with different sizes increasing with annealing temperature. X-ray diffraction (XRD) spectra with a distinguish peak (002) for CdSe films with a hexagonal structure and annealed films were polycrystalline. The crystallinity was improved at 873 K. The bandgap for CdSe films was 2.2 eV, which decreased with increasing annealing temperature.
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