碳箔上自键碳化硅层的制备及其性能

Recent Patents on Materials Science Pub Date : 2013-08-31 DOI:10.2174/18744648113069990015

S. Brantov, D. N. Borisenko, I. Shmytko, E. A. Steinman

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引用次数: 1

摘要

我们提出了一种在碳箔上生长碳化硅晶体层的方法。该材料是通过在动态真空中以高达2.5米/分钟的速度移动碳箔带，对抗含有熔融硅的石墨毛细管馈线而产生的。由于各种化学气相反应，SiC晶体以高达1.5 mm/s的速度生长。晶体和箔形成具有半导体特性的复合材料。本文对相关专利进行了讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties

We suggest a method of growing silicon carbide crystal layers on carbon foil. The material is produced by moving a carbon foil tape at a speed up to 2.5 m/min in dynamic vacuum against a graphite capillary feeder that contains molten silicon. As a result of various chemical vapor reactions, SiC crystals grow at a speed up to 1.5 mm/s. The crystals and the foil form a composite material with semiconducting properties. In this article, we have discussed relevant patents.

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Recent Patents on Materials Science

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