S. Brantov, D. N. Borisenko, I. Shmytko, E. A. Steinman
{"title":"碳箔上自键碳化硅层的制备及其性能","authors":"S. Brantov, D. N. Borisenko, I. Shmytko, E. A. Steinman","doi":"10.2174/18744648113069990015","DOIUrl":null,"url":null,"abstract":"We suggest a method of growing silicon carbide crystal layers on carbon foil. The material is produced by moving a carbon foil tape at a speed up to 2.5 m/min in dynamic vacuum against a graphite capillary feeder that contains molten silicon. As a result of various chemical vapor reactions, SiC crystals grow at a speed up to 1.5 mm/s. The crystals and the foil form a composite material with semiconducting properties. In this article, we have discussed relevant patents.","PeriodicalId":20875,"journal":{"name":"Recent Patents on Materials Science","volume":"14 1","pages":"253-257"},"PeriodicalIF":0.0000,"publicationDate":"2013-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties\",\"authors\":\"S. Brantov, D. N. Borisenko, I. Shmytko, E. A. Steinman\",\"doi\":\"10.2174/18744648113069990015\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We suggest a method of growing silicon carbide crystal layers on carbon foil. The material is produced by moving a carbon foil tape at a speed up to 2.5 m/min in dynamic vacuum against a graphite capillary feeder that contains molten silicon. As a result of various chemical vapor reactions, SiC crystals grow at a speed up to 1.5 mm/s. The crystals and the foil form a composite material with semiconducting properties. In this article, we have discussed relevant patents.\",\"PeriodicalId\":20875,\"journal\":{\"name\":\"Recent Patents on Materials Science\",\"volume\":\"14 1\",\"pages\":\"253-257\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-08-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Recent Patents on Materials Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2174/18744648113069990015\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Recent Patents on Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2174/18744648113069990015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties
We suggest a method of growing silicon carbide crystal layers on carbon foil. The material is produced by moving a carbon foil tape at a speed up to 2.5 m/min in dynamic vacuum against a graphite capillary feeder that contains molten silicon. As a result of various chemical vapor reactions, SiC crystals grow at a speed up to 1.5 mm/s. The crystals and the foil form a composite material with semiconducting properties. In this article, we have discussed relevant patents.
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