M. Montanari, C. Ciano, L. Persichetti, L. Gaspare, M. Virgilio, G. Capellini, M. Zoellner, O. Skibitzki, D. Stark, G. Scalari, J. Faist, D. Paul, T. Grange, S. Birner, M. Scuderi, G. Nicotra, O. Moutanabbir, S. Mukherjee, L. Baldassarre, M. Ortolani, M. Seta
{"title":"用于太赫兹量子级联激光器的高质量n型Ge/SiGe多层材料","authors":"M. Montanari, C. Ciano, L. Persichetti, L. Gaspare, M. Virgilio, G. Capellini, M. Zoellner, O. Skibitzki, D. Stark, G. Scalari, J. Faist, D. Paul, T. Grange, S. Birner, M. Scuderi, G. Nicotra, O. Moutanabbir, S. Mukherjee, L. Baldassarre, M. Ortolani, M. Seta","doi":"10.1109/IRMMW-THz.2019.8874294","DOIUrl":null,"url":null,"abstract":"The exploitation of intersubband transitions in Ge/SiGe quantum cascade devices could pave the way towards the integration of THz light emitters into the silicon-based technology. Aiming at the realization of a Ge/SiGe Quantum Cascade Laser (QCL), we investigate optical and structural properties of n-type Ge/SiGe coupled quantum well systems. The samples have been investigated by means of X-ray diffraction, scanning transmission electron microscopy, atom probe tomography and Fourier Transform Infrared absorption spectroscopy to assess the growth capability with respect to QCL design requirements, carefully identified by means of modelling based on the non-equilibrium Green function formalism.","PeriodicalId":6686,"journal":{"name":"2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)","volume":"26 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers\",\"authors\":\"M. Montanari, C. Ciano, L. Persichetti, L. Gaspare, M. Virgilio, G. Capellini, M. Zoellner, O. Skibitzki, D. Stark, G. Scalari, J. Faist, D. Paul, T. Grange, S. Birner, M. Scuderi, G. Nicotra, O. Moutanabbir, S. Mukherjee, L. Baldassarre, M. Ortolani, M. Seta\",\"doi\":\"10.1109/IRMMW-THz.2019.8874294\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The exploitation of intersubband transitions in Ge/SiGe quantum cascade devices could pave the way towards the integration of THz light emitters into the silicon-based technology. Aiming at the realization of a Ge/SiGe Quantum Cascade Laser (QCL), we investigate optical and structural properties of n-type Ge/SiGe coupled quantum well systems. The samples have been investigated by means of X-ray diffraction, scanning transmission electron microscopy, atom probe tomography and Fourier Transform Infrared absorption spectroscopy to assess the growth capability with respect to QCL design requirements, carefully identified by means of modelling based on the non-equilibrium Green function formalism.\",\"PeriodicalId\":6686,\"journal\":{\"name\":\"2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)\",\"volume\":\"26 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRMMW-THz.2019.8874294\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THz.2019.8874294","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers
The exploitation of intersubband transitions in Ge/SiGe quantum cascade devices could pave the way towards the integration of THz light emitters into the silicon-based technology. Aiming at the realization of a Ge/SiGe Quantum Cascade Laser (QCL), we investigate optical and structural properties of n-type Ge/SiGe coupled quantum well systems. The samples have been investigated by means of X-ray diffraction, scanning transmission electron microscopy, atom probe tomography and Fourier Transform Infrared absorption spectroscopy to assess the growth capability with respect to QCL design requirements, carefully identified by means of modelling based on the non-equilibrium Green function formalism.
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