O. González, J. Pereda, A. Herrera, A. Grande, Á. Vegas
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引用次数: 2
摘要
将双端口集总网络FDTD (tp - nn -FDTD)方法应用于具有非零跨导延迟参数的场效应晶体管(fet)建模。为此，在电流发生器中与相位延迟相关的指数因子近似为有理函数。通过计算微波异质结场效应管(HJ-FET)放大器的散射参数，证明了该方法的有效性
Applying the Two-Port Lumped-Network FDTD Method to Modeling Linear Field-Effect Transistors with Nonzero Transconductance Delay Parameter
The two-port lumped-network FDTD (TP-LN-FDTD) method has been applied to modeling field effect transistors (FETs) with nonzero transconductance delay parameter. To this end, the exponential factor associated with phase delay in the current generator is approximated by a rational function. The validity of this approach has been demonstrated by computing the scattering parameters of a microwave heterojunction FET (HJ-FET) amplifier
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